Bulk damage effects in irradiated silicon detectors due to clustered divacancies

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EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH CERN-PPE/97-11 4 February 1997 BULK DAMAGE EFFECTS IN IRRADIATED SILICON DETECTORS DUE TO CLUSTERED DIVACANCIES

High resistivity silicon particle detectors will be used extensively in experiments at the future CERN Large Hadron Collider where the enormous particle fluences give rise to significant atomic displacement damage. A model has been developed to estimate the evolution of defect concentrations during irradiation and their electrical behaviour according to Shockley-Read-Hall (SRH) semiconductor st...

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Damage Induced by Pions in Silicon Detectors

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ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 1997

ISSN: 0021-8979,1089-7550

DOI: 10.1063/1.365790